Thin-film device including a terminal electrode connected to respective end faces of conductor layers

ABSTRACT

A thin-film device incorporates a device main body and four terminal electrodes. The device main body has four side surfaces. The terminal electrodes are disposed to touch respective portions of the side surfaces. The device main body includes a lower conductor layer that is not used to form a passive element, and an upper conductor layer used to form the passive element. The upper and lower conductor layers include respective lead electrode portions that have respective end faces located at the side surfaces of the device main body. At the side surfaces of the device main body, the end face of the lead electrode portion of the lower conductor layer and the end face of the lead electrode portion of the upper conductor layer are electrically and physically connected to each other. The terminal electrodes touch these end faces and are thereby connected to the upper and lower conductor layers.

This is a Continuation of application Ser. No. 11/723,925 filed Mar. 22,2007. This application claims the benefit of Japanese Patent ApplicationNo. 2006-097365, filed Mar. 31, 2006, which is incorporated herein byreference in its entirety.

BACKGROUND

1. Field of the Invention

The present invention relates to a thin-film device incorporating aconductor layer and a terminal electrode connected to the conductorlayer.

2. Description of the Related Art

With increasing demands for reductions in dimensions and thickness ofhigh frequency electronic apparatuses such as cellular phones,reductions in dimensions and profile of electronic components mounted onthe high frequency electronic apparatuses have been sought. Some of theelectronic components have such a configuration that insulating layersand conductor layers are formed on a substrate through the use ofthin-film forming techniques. Such electronic components formed throughthe use of thin-film forming techniques are called thin-film device inthe present patent application.

In a thin-film device, terminal electrodes are provided for connectingconductor layers to an external circuit. Here, a portion of thethin-film device other than the terminal electrodes is called a devicemain body. Each conductor layer connected to the terminal electrodesincludes a wiring portion, for example, and is formed so that an endface of the wiring portion is exposed at a side surface of the devicemain body. In this case, the terminal electrodes are disposed on theside surfaces of the device main body, for example, so as to beconnected to the end faces of the wiring portion.

Here is given an example of a method of manufacturing a thin-film devicewherein the terminal electrodes are disposed on the side surfaces of thedevice main body. In the method, first, a thin-film device substructureis fabricated by forming layers such as conductor layers correspondingto a plurality of thin-film devices on a single wafer (a substrate). Thesubstructure includes a plurality of preliminary device main bodyportions each of which will be a device main body. Furthermore, in thesubstructure, there are provided portions to be removed betweenrespective adjacent ones of the preliminary device main body portions.Next, the plurality of preliminary device main body portions areseparated into a plurality of device main bodies by cutting thesubstructure at positions of the portions to be removed. By cutting thesubstructure in such a manner, side surfaces of the device main bodiesare formed, and end faces of wiring portions to be connected to terminalelectrodes are exposed at the side surfaces. Next, the terminalelectrodes are formed on the side surfaces of the device main bodies.

To reduce the dimensions and profile of a thin-film device, it iseffective to reduce the thickness of layers such as conductor layers.However, according to the above-described method, a reduction inthickness of conductor layers causes a reduction in areas of the endfaces of the wiring portion connected to the terminal electrodes. As aresult, the regions in which the conductor layers touch the terminalelectrodes are reduced in area, and accordingly it becomes difficult tosecure the reliability of connection between the conductor layers andthe terminal electrodes.

To avoid this problem, such a technique is conceivable that the wiringportion may be increased in width to thereby increase the area of theend faces of the wiring portion. However, this may cause a problem inthe thin-film device that the density of the wiring portion is reducedand therefore it becomes difficult to reduce the dimensions of thethin-film device, or that the impedance of the wiring portion deviatesfrom a desired value and the characteristics of the thin-film device arethereby degraded. Another problem is that there occurs an increase inarea of the region of the thin-film device in which the wiring portionis located, and it is therefore difficult to reduce the dimensions ofthe thin-film device and the area occupied by the thin-film device.

JP 10-163002A discloses a technique wherein, in a chip-shaped electroniccomponent in which an inner conductor film is disposed on a substrateand external terminal electrodes are connected to end faces of the innerconductor film, the end faces of the inner conductor film are tiltedwith respect to a sectional surface of the substrate.

JP 11-003833A discloses a technique wherein, in an electronic componentin which electrodes are disposed on a substrate and external terminalsare connected to end faces of the electrodes, the end faces of theelectrodes on the substrate are tilted with respect to sectional endfaces of the substrate.

JP 2-121313A discloses a thin-film capacitor wherein three or more innerelectrode layers and two or more dielectric layers are alternatelystacked on a substrate, and outer electrodes connected to the innerelectrode layers are disposed on side surfaces of the substrate. JP2-121313A discloses a technique wherein two of the inner electrodelayers forming one of electrodes of a single capacitor in a circuit arelaid over each other in a neighborhood of one of the side surfaces ofthe substrate, and one of the outer electrodes is connected to theportions of the two inner electrode layers laid over each other.

JP 5-129149A discloses a thin-film capacitor wherein four innerelectrodes and four dielectric thin films are alternately stacked on asubstrate, and outer electrodes connected to the inner electrodes aredisposed on side surfaces of the substrate. JP 5-129149A discloses atechnique wherein two of the inner electrodes forming one of electrodesof a single capacitor in a circuit are laid over each other in aneighborhood of the side surfaces of the substrate, and the outerelectrodes are connected to the portions of the two inner electrodeslaid over each other.

In the following description the external terminal electrodes of JP10-163002A, the external terminals of JP 11-003833A, and the externalelectrodes of JP 2-121313A and JP 5-129149A are all called terminalelectrodes.

As previously described, in a thin-film device in which terminalelectrodes are disposed on the side surfaces of the device main body, areduction in thickness of conductor layers causes a reduction in areasof the end faces of the wiring portion connected to the terminalelectrodes, and as a result, the regions in which the conductor layerstouch the terminal electrodes are reduced in area and accordingly itbecomes difficult to secure the reliability of connection between theconductor layers and the terminal electrodes.

According to the technique disclosed in JP 10-163002A or JP 11-003833A,it is possible to increase the areas of the regions in which theconductor layers touch the terminal electrodes, but the amount ofincrease in the areas is very small. It is therefore difficult to securea satisfactory degree of reliability of connection between the conductorlayers and the terminal electrodes through the use of the techniquedisclosed in JP 10-163002A or JP 11-003833A.

According to the technique disclosed in JP 2-121313A or JP 5-129149A, itis possible to increase the areas of the regions in which the conductorlayers touch the terminal electrodes, compared with the case in whichthe terminal electrodes touch only the end face of one of the conductorlayers. However, the technique disclosed in JP 2-121313A or JP 5-129149Ais applicable only to cases in which there are a plurality of conductorlayers forming one of electrodes of a single capacitor in the circuit.It is difficult to reduce the size and profile of the thin-film devicewhen there are a plurality of conductor layers forming one of electrodesof a single capacitor in the circuit.

SUMMARY

It is an object of the invention to provide a thin-film deviceincorporating a conductor layer and a terminal electrode connected tothe conductor layer, the thin-film device being capable of enhancing thereliability of connection between the conductor layer and the terminalelectrode and capable of achieving reductions in size and profile of thethin-film device.

A first thin-film device of the invention incorporates a layeredstructure and a terminal electrode. The layered structure has a sidesurface, and includes a plurality of conductor layers disposed atdifferent levels along the direction in which the layers are stacked andan insulating layer disposed between two of the conductor layers locatedadjacent to each other along the direction in which the layers arestacked. The terminal electrode is disposed to touch the side surface ofthe layered structure. The layered structure incorporates a firstpassive element and a second passive element each of which is formedusing at least one of the conductor layers. The plurality of conductorlayers include a first conductor layer used to form the first passiveelement, and a second conductor layer used to form the second passiveelement and disposed at a level different from a level at which thefirst conductor layer is disposed along the direction in which thelayers are stacked. At the side surface of the layered structure, an endface of the first conductor layer and an end face of the secondconductor layer are electrically and physically connected to each other,and the terminal electrode touches the end face of the first conductorlayer and the end face of the second conductor layer and is therebyconnected to the first and second conductor layers.

According to the first thin-film device of the invention, at the sidesurface of the layered structure, the terminal electrode touches the endface of the first conductor layer and the end face of the secondconductor layer that are electrically and physically connected to eachother, and is thereby connected to the first and second conductorlayers.

In the first thin-film device of the invention, the first and secondpassive elements may be capacitors different from each other orinductors different from each other. Since two capacitors forming aparallel circuit by themselves can be treated as a single capacitor in acircuit, such two capacitors are not included in the ‘capacitorsdifferent from each other’ as the first and second passive elements ofthe invention.

In the first thin-film device of the invention, the maximum number ofthe conductor layers aligned along the direction in which the layers arestacked may be two.

A second thin-film device of the invention incorporates a layeredstructure and a terminal electrode. The layered structure has a sidesurface, and includes a plurality of conductor layers disposed atdifferent levels along the direction in which the layers are stacked andan insulating layer disposed between two of the conductor layers locatedadjacent to each other along the direction in which the layers arestacked. The terminal electrode is disposed to touch the side surface ofthe layered structure. The layered structure incorporates a passiveelement formed using at least one of the conductor layers. The pluralityof conductor layers include a first conductor layer used to form thepassive element, and a second conductor layer that is not used to formthe passive element and disposed at a level different from a level atwhich the first conductor layer is disposed along the direction in whichthe layers are stacked. At the side surface of the layered structure, anend face of the first conductor layer and an end face of the secondconductor layer are electrically and physically connected to each other,and the terminal electrode touches the end face of the first conductorlayer and the end face of the second conductor layer and is therebyconnected to the first and second conductor layers.

According to the second thin-film device of the invention, at the sidesurface of the layered structure, the terminal electrode touches the endface of the first conductor layer and the end face of the secondconductor layer that are electrically and physically connected to eachother, and is thereby connected to the first and second conductorlayers.

In the second thin-film device of the invention, the maximum number ofthe conductor layers aligned along the direction in which the layers arestacked may be two.

According to the first or second thin-film device of the invention, atthe side surface of the layered structure, the terminal electrodetouches the end face of the first conductor layer and the end face ofthe second conductor layer that are electrically and physicallyconnected to each other, and is thereby connected to the first andsecond conductor layers. As a result, according to the invention, it ispossible to increase the area of the region in which the conductorlayers touch the terminal electrode and to thereby enhance thereliability of connection between the conductor layers and the terminalelectrode. Furthermore, according to the invention, the first and secondconductor layers used to form a surface connected to the terminalelectrode are not the layers used to form an identical passive element.Therefore, according to the invention, in order to form the surfaceconnected to the terminal electrode, it is not necessary to make thenumber of conductor layers used to form a single passive element greaterthan required, and it is thereby possible to reduce the size and profileof the thin-film device.

In the first or second thin-film device of the invention, in the casewhere the maximum number of the conductor layers aligned along thedirection in which the layers are stacked is two, it is possible toreduce the size and profile of the thin-film device in particular.

Other and further objects, features and advantages of the invention willappear more fully from the following description.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a thin-film device of a firstembodiment of the invention;

FIG. 2 is another cross-sectional view of the thin-film device of thefirst embodiment of the invention;

FIG. 3 is a top view of the thin-film device of the first embodiment ofthe invention;

FIG. 4 is a top view of lower conductor layers that the thin-film deviceof the first embodiment of the invention includes;

FIG. 5 is a top view of an insulating layer that the thin-film device ofthe first embodiment of the invention includes;

FIG. 6 is a top view of a dielectric film that the thin-film device ofthe first embodiment of the invention includes;

FIG. 7 is a top view of upper conductor layers that the thin-film deviceof the first embodiment of the invention includes;

FIG. 8 is a top view of a protection film that the thin-film device ofthe first embodiment of the invention includes;

FIG. 9 is a schematic diagram illustrating the circuit configuration ofthe thin-film device of the first embodiment of the invention;

FIG. 10 is a cross-sectional view for describing a method ofmanufacturing the thin-film device of the first embodiment of theinvention;

FIG. 11 is a cross-sectional view illustrating a step that follows thestep of FIG. 10;

FIG. 12 is a cross-sectional view of a thin-film device of a secondembodiment of the invention;

FIG. 13 is another cross-sectional view of the thin-film device of thesecond embodiment of the invention;

FIG. 14 is a top view of the thin-film device of the second embodimentof the invention;

FIG. 15 is a top view of lower conductor layers that the thin-filmdevice of the second embodiment of the invention includes;

FIG. 16 is a top view of an insulating layer that the thin-film deviceof the second embodiment of the invention includes;

FIG. 17 is a top view of a dielectric film that the thin-film device ofthe second embodiment of the invention includes;

FIG. 18 is a top view of upper conductor layers that the thin-filmdevice of the second embodiment of the invention includes;

FIG. 19 is a top view of a protection film that the thin-film device ofthe second embodiment of the invention includes; and

FIG. 20 is a schematic diagram illustrating the circuit configuration ofthe thin-film device of the second embodiment of the invention.

DETAILED DESCRIPTION OF EMBODIMENTS First Embodiment

Preferred embodiments of the invention will now be described in detailwith reference to the accompanying drawings. Reference is now made toFIG. 9 to describe the circuit configuration of a thin-film device of afirst embodiment of the invention. FIG. 9 is a schematic diagramillustrating the circuit configuration of the thin-film device of thefirst embodiment. The thin-film device 1 of the embodiment has afunction of a low-pass filter.

As shown in FIG. 9, the thin-film device 1 of the embodimentincorporates: two input/output terminals 101 and 102 for receiving andoutputting signals; three capacitors 111, 112 and 113; and one inductor114. The capacitor 111 has an end connected to the input/output terminal101, and the other end grounded. The capacitor 112 has an end connectedto the input/output terminal 102, and the other end grounded. Thecapacitor 113 has an end connected to the input/output terminal 101, andthe other end connected to the input/output terminal 102. The inductor114 has an end connected to the input/output terminal 101, and the otherend connected to the input/output terminal 102.

Reference is now made to FIG. 1 to FIG. 8 to describe the structure ofthe thin-film device 1 of the embodiment. Each of FIG. 1 and FIG. 2 is across-sectional view of the thin-film device 1. FIG. 3 is a top view ofthe thin-film device 1. The cross-section of FIG. 1 is taken along line1-1 of FIG. 3. The cross-section of FIG. 2 is taken along line 2-2 ofFIG. 3. FIG. 4 is a top view of lower conductor layers that thethin-film device 1 includes. FIG. 5 is a top view of an insulating layerthat the thin-film device 1 includes. FIG. 6 is a top view of adielectric film that the thin-film device 1 includes. FIG. 7 is a topview of upper conductor layers that the thin-film device 1 includes.FIG. 8 is a top view of a protection film that the thin-film device 1includes.

As shown in FIG. 1 to FIG. 3, the thin-film device 1 incorporates adevice main body 1B and four terminal electrodes 11 to 14. The devicemain body 1B corresponds to a layered structure of the invention. Thedevice main body 1B is nearly rectangular-solid-shaped, and has a topsurface 1 a, a bottom surface 1 b, and four side surfaces 1 c to 1 fcoupling the top surface 1 a and the bottom surface 1 b to each other.The terminal electrodes 11 to 14 are disposed to touch respectiveportions of the side surfaces 1 c to 1 f. The terminal electrode 11constitutes the input/output terminal 101 of FIG. 9. The terminalelectrode 12 constitutes the input/output terminal 102 of FIG. 9. Theterminal electrodes 13 and 14 are designed to be connected to theground.

The device main body 1B incorporates: a substrate 2; and a flatteningfilm 3, lower conductor layers 41 to 43, an insulating layer 5, adielectric film 6, upper conductor layers 71 to 74, and a protectionfilm 8 that are stacked in this order on the substrate 2.

The substrate 2 is rectangular-solid-shaped. The substrate 2 has: a topsurface 2 a and a bottom surface 2 b that face toward oppositedirections; and four side surfaces 2 c to 2 f that couple the topsurface 2 a and the bottom surface 2 b to each other. The substrate 2 ismade of an insulating material (a dielectric material), for example. Theinsulating material forming the substrate 2 may be an inorganic materialor an organic material. The insulating material forming the substrate 2may be Al₂O₃, for example. The substrate 2 may be made of asemiconductor material.

The flattening film 3 is made of an insulating material. The insulatingmaterial forming the flattening film 3 may be an inorganic material oran organic material. The inorganic material forming the flattening film3 may be Al₂O₃, for example. The organic material forming the flatteningfilm 3 may be a resin. In this case, the resin may be a thermoplasticresin or a thermosetting resin. The surface roughness of the top surfaceof the flattening film 3 is smaller than that of the top surface of thesubstrate 2. Therefore, the flattening film 3 has a function of reducingthe surface roughness of a layer underlying the lower conductor layers41 to 43. It is required that the flattening film 3 accommodateirregularities of the top surface of the substrate 2 and that the topsurface of the flattening film 3 be flat. To achieve this, it isdesirable that the flattening film 3 have a thickness within a range of0.1 to 10 μm inclusive. If the substrate 2 is made of an insulatingmaterial and the surface roughness of the top surface thereof issufficiently small, the lower conductor layers 41 to 43 may be disposeddirectly on the substrate 2 without providing the flattening film 3.

The lower conductor layers 41 to 43, the upper conductor layers 71 to74, and the terminal electrodes 11 to 14 are made of a conductivematerial. Each of the lower conductor layers 41 to 43 preferably has athickness within a range of 5 to 10 μm inclusive. Each of the upperconductor layers 71 to 74 preferably has a thickness within a range of 5to 10 μm inclusive. Each of the terminal electrodes 11 to 14 preferablyhas a thickness within a range of 0.5 to 10 μm inclusive, so thatbreakage of the terminal electrodes 11 to 14 will not occur in cornersor stepped portions.

Each of the insulating layer 5 and the protection film 8 is made of aninsulating material. The insulating material forming the insulatinglayer 5 and the protection film 8 may be an inorganic material or anorganic material. The inorganic material forming the insulating layer 5and the protection film 8 may be Al₂O₃, for example. The organicmaterial forming the insulating layer 5 and the protection film 8 may bea resin. In this case, the resin may be a thermoplastic resin or athermosetting resin. The resin may be any of a polyimide resin, anacrylic resin, an epoxy resin, an ethylene tetrafluoride resin,denatured polyphenylene ether, a liquid crystal polymer, and modifiedpolyimide, for example. The resin may be a photosensitive resin. Theinsulating layer 5 preferably has a thickness within a range of 0.1 to10 μm inclusive, so as to improve the reliability of insulation betweenthe upper and lower conductor layers and to improve the high frequencycharacteristic by suppressing occurrences of unwanted components such asstray capacitance. The protection film 8 preferably has a thicknesswithin a range of 1 to 50 μm inclusive, so as to protect the inside ofthe product with the protection film 8.

The dielectric film 6 is made of a dielectric material. The dielectricmaterial forming the dielectric film 6 is preferably an inorganicmaterial. The dielectric material forming the dielectric film 6 may beAl₂O₃, Si₄N₃ or SiO₂, for example. The dielectric film 6 preferably hasa thickness within a range of 0.02 to 1 μm inclusive, and morepreferably within a range of 0.05 to 0.5 μm inclusive.

Reference is now made to FIG. 4 to describe the shapes of the lowerconductor layers 41 to 43. FIG. 4 is a top view illustrating the lowerconductor layers 41 to 43. The lower conductor layer 41 includes: a leadelectrode portion 41 a; a capacitor-forming portion 41 b connected tothe lead electrode portion 41 a; and an inductor-forming portion 41 chaving an end connected to the capacitor-forming portion 41 b. The lowerconductor layer 41 has an end face 41E located at a position thatcoincides with the ridgeline between the top surface 2 a and the sidesurface 2 c of the substrate 2 when the lower conductor layer 41 is seenfrom above. The end face 41E is also an end face of the lead electrodeportion 41 a.

The lower conductor layer 42 includes a lead electrode portion 42 a anda wiring portion 42 b connected to the lead electrode portion 42 a. Thelower conductor layer 42 has an end face 42E located at a position thatcoincides with the ridgeline between the top surface 2 a and the sidesurface 2 d of the substrate 2 when the lower conductor layer 42 is seenfrom above. The end face 42E is also an end face of the lead electrodeportion 42 a.

The lower conductor layer 43 includes lead electrode portions 43 a 1 and43 a 2, and a capacitor-forming portions 43 b connecting the leadelectrode portions 43 a 1 and 43 a 2 to each other. The lower conductorlayer 43 has an end face 43E1 located at a position that coincides withthe ridgeline between the top surface 2 a and the side surface 2 e ofthe substrate 2 when the lower conductor layer 43 is seen from above.The end face 43E1 is also an end face of the lead electrode portion 43 a1. In addition, the lower conductor layer 43 has an end face 43E2located at a position that coincides with the ridgeline between the topsurface 2 a and the side surface 2 f of the substrate 2 when the lowerconductor layer 43 is seen from above. The end face 43E2 is also an endface of the lead electrode portion 43 a 2.

Reference is now made to FIG. 5 to describe the shape of the insulatinglayer 5. FIG. 5 is a top view of the insulating layer 5. Theillustrating layer 5 covers major parts of the flattening film 3 and thelower conductor layers 41 to 43. The insulating layer 5 has openings 51to 55. The openings 51 and 52 are located above the capacitor-formingportion 41 b of the lower conductor layer 41. The opening 53 is locatedabove the capacitor-forming portion 43 b of the lower conductor layer43. The opening 54 is located above a portion near the other end of theinductor-forming portion 41 c of the lower conductor layer 41. Theopening 55 is located above the wiring portion 42 b of the lowerconductor layer 42.

The insulating layer 5 has four concave portions 5 c to 5 f each ofwhich has a shape that is recessed inward from the outer edge of theinsulating layer 5. The concave portions 5 c to 5 f are respectivelylocated at positions corresponding to the side surfaces 2 c to 2 f ofthe substrate 2. The concave portions 5 c to 5 f expose the top surfacesof the lead electrode portions 41 a, 42 a, 43 a 1 and 43 a 2,respectively.

Reference is now made to FIG. 6 to describe the shape of the dielectricfilm 6. FIG. 6 is a top view of the dielectric film 6. The dielectricfilm 6 covers the entire top surface of the insulating layer 5. Thedielectric film 6 is also located in the openings 51, 52 and 53. Thedielectric film 6 has openings 64 and 65. The opening 64 is locatedabove the opening 54 of the insulating layer 5. The opening 65 islocated above the opening 55 of the insulating layer 5.

The dielectric film 6 has four concave portions 6 c to 6 f each of whichhas a shape that is recessed inward from the outer edge of thedielectric film 6. The concave portions 6 c to 6 f are respectivelylocated above the concave portions 5 c to 5 f of the insulating layer 5.The concave portions 6 c to 6 f expose the top surfaces of the leadelectrode portions 41 a, 42 a, 43 a 1 and 43 a 2, respectively.

Reference is now made to FIG. 7 to describe the shapes of the upperconductor layers 71 to 74. FIG. 7 is a top view illustrating the upperconductor layers 71 to 74. The upper conductor layer 71 includes a leadelectrode portion 71 a, and a wide portion 71 b connected to the leadelectrode portion 71 a. The upper conductor layer 71 has an end face 71Elocated at a position that coincides with the ridgeline between the topsurface 2 a and the side surface 2 c of the substrate 2 when the upperconductor layer 71 is seen from above. The end face 71E is also an endface of the lead electrode portion 71 a.

The upper conductor layer 72 includes a lead electrode portion 72 a anda wide portion 72 b connected to the lead electrode portion 72 a. Theupper conductor layer 72 has an end face 72E located at a position thatcoincides with the ridgeline between the top surface 2 a and the sidesurface 2 d of the substrate 2 when the upper conductor layer 72 is seenfrom above. The end face 72E is also an end face of the lead electrodeportion 72 a.

The upper conductor layer 73 includes lead electrode portions 73 a 1 and73 a 2, and a capacitor-forming portion 73 b connecting the leadelectrode portions 73 a 1 and 73 a 2 to each other. The upper conductorlayer 73 has an end face 73E1 located at a position that coincides withthe ridgeline between the top surface 2 a and the side surface 2 e ofthe substrate 2 when the upper conductor layer 73 is seen from above.The end face 73E1 is also an end face of the lead electrode portion 73 a1. In addition, the upper conductor layer 73 has an end face 73E2located at a position that coincides with the ridgeline between the topsurface 2 a and the side surface 2 f of the substrate 2 when the upperconductor layer 73 is seen from above. The end face 73E2 is also an endface of the lead electrode portion 73 a 2. A portion of thecapacitor-forming portion 73 b is located in the opening 51 and opposedto a portion of the capacitor-forming portion 41 b of the lowerconductor layer 41 with the dielectric film 6 disposed in between. Theseportions of the capacitor-forming portions 73 b and 41 b and thedielectric film 6 constitute the capacitor 111 of FIG. 9.

The upper conductor layer 74 includes capacitor-forming portions 74 aand 74 b, and a wiring portion 74 c connecting the capacitor-formingportions 74 a and 74 b to each other. A portion of the capacitor-formingportion 74 a is located in the opening 52 and opposed to another portionof the capacitor-forming portion 41 b of the lower conductor layer 41with the dielectric film 6 disposed in between. These portions of thecapacitor-forming portions 74 a and 41 b and the dielectric film 6constitute the capacitor 113 of FIG. 9. A portion of thecapacitor-forming portion 74 b is located in the opening 53 and opposedto a portion of the capacitor-forming portion 43 b of the lowerconductor layer 43 with the dielectric film 6 disposed in between. Theseportions of the capacitor-forming portions 74 b and 43 b and thedielectric film 6 constitute the capacitor 112 of FIG. 9. Anotherportion of the capacitor-forming portion 74 b is located in the openings65 and 55 and connected to the wiring portion 42 b of the lowerconductor layer 42. A portion of the wiring portion 74 c is located inthe openings 64 and 54 and connected to the portion near the other endof the inductor-forming portion 41 c of the lower conductor layer 41.The inductor-forming portion 41 c constitutes the inductor 114 of FIG.9.

The lead electrode portions 71 a, 72 a, 73 a 1 and 73 a 2 are connectedto the lead electrode portions 41 a, 42 a, 43 a 1 and 43 a 2,respectively.

Reference is now made to FIG. 8 to describe the shape of the protectionfilm 8. FIG. 8 is a top view of the protection film 8. The protectionfilm 8 covers major parts of the upper conductor layers 71 to 74. Theprotection film 8 has four concave portions 8 c to 8 f each of which hasa shape that is recessed inward from the outer edge of the protectionfilm 8. The concave portions 8 c to 8 f are respectively located abovethe concave portions 6 c to 6 f of the dielectric film 6. The concaveportions 8 c to 8 f expose the top surfaces of the lead electrodeportions 71 a, 72 a, 73 a 1 and 73 a 2, respectively.

Reference is now made to FIG. 1 to FIG. 3 to describe the connectionbetween the conductor layers and the terminal electrodes 11 to 14 indetail. As shown in FIG. 2, at the side surface 1 c of the device mainbody 1B, the end face 41E of the lower conductor layer 41 and the endface 71E of the upper conductor layer 71 are electrically and physicallyconnected to each other. As a result, the end faces 41E and 71E form onecontiguous terminal connecting surface 91 c. As shown in FIG. 2, at theside surface 1 d of the device main body 1B, the end face 42E of thelower conductor layer 42 and the end face 72E of the upper conductorlayer 72 are electrically and physically connected to each other. As aresult, the end faces 42E and 72E form one contiguous terminalconnecting surface 91 d. As shown in FIG. 1, at the side surface 1 e ofthe device main body 1B, the end face 43E1 of the lower conductor layer43 and the end face 73E1 of the upper conductor layer 73 areelectrically and physically connected to each other. As a result, theend faces 43E1 and 73E1 form one contiguous terminal connecting surface91 e. As shown in FIG. 1, at the side surface 1 f of the device mainbody 1B, the end face 43E2 of the lower conductor layer 43 and the endface 73E2 of the upper conductor layer 73 are electrically andphysically connected to each other. As a result, the end faces 43E2 and73E2 form one contiguous terminal connecting surface 91 f.

As shown in FIG. 2, the terminal electrode 11 is disposed to touch aportion of the side surface 1 c and a portion of the bottom surface 1 bcontiguous to the side surface 1 c of the device main body 1B. Theterminal electrode 11 is smaller in width than the side surface 1 c. Theterminal electrode 11 touches the end faces 41E and 71E, that is, theterminal connecting surface 91 c, and is thereby connected to theconductor layers 41 and 71. A portion of the terminal electrode 11 isplaced in the concave portion 8 c of the protection film 8 and therebytouches a portion of the top surface of the upper conductor layer 71.

As shown in FIG. 2, the terminal electrode 12 is disposed to touch aportion of the side surface 1 d and a portion of the bottom surface 1 bcontiguous to the side surface 1 d of the device main body 1B. Theterminal electrode 12 is smaller in width than the side surface 1 d. Theterminal electrode 12 touches the end faces 42E and 72E, that is, theterminal connecting surface 91 d, and is thereby connected to theconductor layers 42 and 72. A portion of the terminal electrode 12 isplaced in the concave portion 8 d of the protection film 8 and therebytouches a portion of the top surface of the upper conductor layer 72.

As shown in FIG. 1, the terminal electrode 13 is disposed to touch aportion of the side surface 1 e and a portion of the bottom surface 1 bcontiguous to the side surface 1 e of the device main body 1B. Theterminal electrode 13 is smaller in width than the side surface 1 e. Theterminal electrode 13 touches the end faces 43E1 and 73E1, that is, theterminal connecting surface 91 e, and is thereby connected to theconductor layers 43 and 73. A portion of the terminal electrode 13 isplaced in the concave portion 8 e of the protection film 8 and therebytouches a portion of the top surface of the upper conductor layer 73.

As shown in FIG. 1, the terminal electrode 14 is disposed to touch aportion of the side surface 1 f and a portion of the bottom surface 1 bcontiguous to the side surface 1 f of the device main body 1B. Theterminal electrode 14 is smaller in width than the side surface 1 f. Theterminal electrode 14 touches the end faces 43E2 and 73E2, that is, theterminal connecting surface 91 f, and is thereby connected to theconductor layers 43 and 73. A portion of the terminal electrode 14 isplaced in the concave portion 8 f of the protection film 8 and therebytouches a portion of the top surface of the upper conductor layer 73.

The terminal electrodes 11 to 14 do not extend out of the concaveportions 8 c to 8 f, respectively, and do not reach over the protectionfilm 8. In the example shown in FIG. 1 to FIG. 3, there is no spacebetween respective edges of the concave portions 8 c to 8 f and therespective portions of the terminal electrodes 11 to 14 disposed in theconcave portions 8 c to 8 f. Furthermore, in this example, the topsurface of the protection film 8 and the top surfaces of the terminalelectrodes 11 to 14 form a contiguous flat surface. In this case, thetop surface of the thin-film device 1 is flat. It suffices that portionsof the terminal electrodes 11 to 14 are disposed in the concave portions8 c to 8 f, respectively, and there may be a space between therespective edges of the concave portions 8 c to 8 f and the respectiveportions of the terminal electrodes 11 to 14. Furthermore, there may bea difference in level between the top surface of the protection film 8and the top surface of each of the terminal electrodes 11 to 14.

It is not necessarily required that the terminal electrodes 11 to 14 belocated on the bottom surface 1 b of the device main body 1B.Furthermore, the lower end face of each of the terminal electrodes 11 to14 may be located at an arbitrary level between the lower surface of thelower conductor layer and the bottom surface 1 b of the device main body1B.

Reference is now made to FIG. 10 and FIG. 11 to describe a method ofmanufacturing the thin-film device 1 of the embodiment. FIG. 10 and FIG.11 are cross-sectional views for describing the method of manufacturingthe thin-film device 1. FIG. 10 and FIG. 11 show cross sectionscorresponding to FIG. 2. Although examples of materials and thicknessesof the layers are given in the following description, those examples arenon-limiting for the method of the embodiment.

In the method of manufacturing the thin-film device 1 of the embodiment,first, a wafer 2W of FIG. 10 is prepared. The wafer 2W includes:pre-substrate portions 2P arranged in a plurality of rows; and portionsto be removed 2R provided between respective adjacent ones of thepre-substrate portions 2P. The pre-substrate portions 2P are portionseach of which will be the substrate 2 later. The portions to be removed2R are portions that will be removed later by cutting the wafer 2W.

Next, the flattening film 3 is formed on the wafer 2W. Next, the topsurface of the flattening film 3 is flattened by polishing. A methodemployed for this polishing may be chemical mechanical polishing (CMP),for example. The polishing is performed so that the thickness of theflattening film 3 polished is 2 μm, for example. It is not necessary toflatten the top surface of the flattening film 3 by polishing if thesurface roughness of the top surface of the flattening film 3 is smallenough without flattening the top surface of the flattening film 3.

Next, the lower conductor layers 41 to 43 are formed on the flatteningfilm 3. At this time, the lead electrode portions 41 a, 42 a, 43 a 1 and43 a 2 are formed to extend over regions above the portions to beremoved 2R, so that the respective end faces to be connected to theterminal electrodes 11 to 14 will be formed when the wafer 2W is cutlater. Every two of the lower conductor layers adjacent to each otheracross a region above the portions to be removed 2R may be coupled toeach other in the region above the portions to be removed 2R.

The lower conductor layers 41 to 43 are formed in the following manner,for example. First, an electrode film is formed on the flattening film 3by sputtering, for example. The electrode film will be used as anelectrode when a plating film is formed later by electroplating, andwill form portions of the lower conductor layers 41 to 43. The electrodefilm may be a layered film made up of a Ti film having a thickness of 30nm and a Cu film having a thickness of 100 nm, for example. Next, aphotoresist layer having a thickness of 8 μm, for example, is formed onthe electrode film. Next, the photoresist layer is patterned byphotolithography to form a frame. The frame has grooves having shapescorresponding to the lower conductor layers 41 to 43 to be formed. Next,the plating film is formed in the grooves of the frame byelectroplating. The plating film is made of Cu, for example, and has athickness of 9 to 10 μm, for example. Next, the top surface of theplating film is flattened by polishing. A method employed for thispolishing is CMP, for example. The polishing is performed so that thethickness of the plating film polished is 8 μm, for example. Next, theframe is removed. Next, the electrode film except a portion below theplating film is removed by dry etching or wet etching. The lowerconductor layers 41 to 43 are thereby formed of the remaining portionsof the electrode film and the plating film.

Instead of employing such a process, the lower conductor layers 41 to 43may be formed by forming an unpatterned plating film on the entire topsurface of the electrode film and then etching portions of this platingfilm and the electrode film. Alternatively, the lower conductor layers41 to 43 may be formed by forming an unpatterned conductor film on theflattening film 3 by physical vapor deposition such as sputtering orevaporation and then etching a portion of the conductor film.

Next, the insulating layer 5 is formed by sputtering, for example, tocover the flattening film 3 and the lower conductor layers 41 to 43. Theinsulating layer 5 has the openings 51 to 55 and the concave portions 5c to 5 f. If a photosensitive resin is used as the material of theinsulating layer 5, the insulating layer 5 is patterned byphotolithography. If a material other than a photosensitive resin isused as the material of the insulating layer 5, the insulating layer 5is patterned by selective etching, for example.

Next, the dielectric film 6 is formed on the insulating layer 5. Thethickness of the dielectric film 6 is 0.1 μm, for example. Next, aphotoresist layer is formed on the dielectric film 6. The photoresistlayer is then patterned by photolithography to form a mask for formingthe openings 64 and 65 and the concave portions 6 c to 6 f of thedielectric film 6. The mask covers portions of the dielectric film 6 tobe left finally. Next, portions of the dielectric film 6 that are notcovered with the mask are removed by ashing or etching. The openings 64and 65 and the concave portions 6 c to 6 f are thereby formed in thedielectric film 6. Next, the photoresist layer is removed.

Next, the upper conductor layers 71 to 74 are formed on the dielectricfilm 6. At this time, the lead electrode portions 71 a, 72 a, 73 a 1 and73 a 2 are formed to extend over regions above the portions to beremoved 2R, so that the respective end faces to be connected to theterminal electrodes 11 to 14 will be formed when the wafer 2W is cutlater. Every two of the upper conductor layers adjacent to each otheracross a region above the portions to be removed 2R may be coupled toeach other in the region above the portions to be removed 2R. The methodof forming the upper conductor layers 71 to 74 is the same as that ofthe lower conductor layers 41 to 43.

Next, the protection film 8 is formed to cover the upper conductorlayers 71 to 74. At this point, the concave portions 8 c to 8 f are notformed in the protection film 8 yet.

Next, the protection film 8 is processed so as to remove portions of theprotection film 8 located in the respective regions above the portionsto be removed 2R and remove portions of the protection film 8corresponding to the concave portions 8 c to 8 f to be formed. Theconcave portions 8 c to 8 f are thereby formed in the protection film 8.The protection film 8 may be processed by laser processing, etchingusing plasma, or processing using a dicing saw, for example. If aphotosensitive resin is used as the material of the protection film 8,the protection film 8 may be processed by photolithography. Here, thelayered structure made up of the layers from the wafer 2W to theprotection film 8 fabricated through the foregoing steps is called athin-film device substructure. The substructure includes: a plurality ofpreliminary device main body portions 1P each of which will be thedevice main body 1B; and portions to be removed 1R disposed betweenrespective adjacent ones of the preliminary device main body portions1P. The preliminary device main body portions 1P are made up of thepre-substrate portions 2P and portions thereabove of the substructure.The portions to be removed 1R are made up of the portions to be removed2R and portions thereabove of the substructure.

Next, as shown in FIG. 11, the substructure is cut with a dicing saw,for example, at the locations of the portions to be removed 1R. As aresult, the portions 1R of the substructure are removed, and theplurality of preliminary device main body portions 1P are separated.Each of the preliminary device main body portions 1P separated becomethe device main body 1B. By cutting the substructure, there are formedthe terminal connecting surfaces 91 c to 91 f. In FIG. 11 numeral 10indicates the blade of the dicing saw.

Next, as shown in FIG. 2, the terminal electrodes 11 to 14 are formed atspecific locations of the device main body 1B. The terminal electrodes11 to 14 are formed in the following manner, for example. First, a baseelectrode film is formed at a specific location of the device main body1B. The base electrode film may be formed by applying a conductive resinor a conductive paste to the specific location of the device main body1B by screen printing or transfer and then drying and hardening theresin or paste. Alternatively, a base electrode film made of aconductive film may be formed by forming a mask having an opening at aspecific location on the device main body 1B, forming a conductive filmby sputtering, for example, on the mask and in the opening, and thenremoving the mask. The conductive film used in this case may be alayered film made up of a Cr film and a Cu film, a layered film made upof a Ti film and a Cu film, or a layered film made up of an Ni film anda Cu film, for example. Next, a plating film is formed on the baseelectrode film by barrel plating, for example. The plating film may be alayered film made up of a first film of Ni or Ti and a second film of Snor Au, or a layered film made up of a first film of Cu, a second film ofNi or Ti, and a third film of Sn or Au, for example.

The method of forming the terminal electrodes 11 to 14 is not limited tothe above-described method. For example, the terminal electrodes 11 to14 may be formed by applying a conductive resin or a conductive paste tothe specific locations of the device main body 1B by screen printing ortransfer and then drying and hardening the resin or paste.

Effects of the thin-film device 1 of the embodiment will now bedescribed. The thin-film device 1 of the embodiment incorporates thedevice main body 1B and the terminal electrodes 11 to 14. The devicemain body 1B has the side surfaces 1 c to 1 f, and includes: the lowerconductor layers 41 to 43 and the upper conductor layers 71 to 74, thelower and upper conductor layers being located at different levels alongthe direction in which the layers are stacked; and the insulating layer5 disposed between two of the conductor layers that are adjacent to eachother along the direction in which the layers are stacked. The terminalelectrodes 11 to 14 are disposed to touch the side surfaces 1 c to 1 f,respectively. The device main body 1B incorporates the capacitors 111,112 and 113 and the inductor 114 each of which is a passive elementformed using at least one of the conductor layers.

The lower conductor layer 43 used to form the capacitor 112 has the endface 43E1 located at the side surface 1 e, and the end face 43E2 locatedat the side surface 1 f. The upper conductor layer 73 used to form thecapacitor 111 and located at a level different from the level at whichthe lower conductor layer 43 is located along the direction in which thelayers are stacked has the end face 73E1 located at the side surface 1e, and the end face 73E2 located at the side surface 1 f. At the sidesurface 1 e, the end faces 43E1 and 73E1 are electrically and physicallyconnected to each other. As a result, the end faces 43E1 and 73E1 formthe one contiguous terminal connecting surface 91 e. The terminalelectrode 13 touches the end faces 43E1 and 73E1, that is, the terminalconnecting surface 91 e, and is thereby connected to the conductorlayers 43 and 73. At the side surface 1 f, the end faces 43E2 and 73E2are electrically and physically connected to each other. As a result,the end faces 43E2 and 73E2 form the one contiguous terminal connectingsurface 91 f. The terminal electrode 14 touches the end faces 43E2 and73E2, that is, the terminal connecting surface 91 f, and is therebyconnected to the conductor layers 43 and 73. The capacitor 112corresponds to the first passive element of the invention. The capacitor111 corresponds to the second passive element of the invention. Thelower conductor layer 43 corresponds to the first conductor layer of theinvention. The upper conductor layer 73 corresponds to the secondconductor layer of the invention.

The lower conductor layer 41 used to form the capacitors 111 and 113 andthe inductor 114 has the end face 41E located at the side surface 1 c.The upper conductor layer 71 that is not used to form any passiveelement and that is located at a level different from the level at whichthe lower conductor layer 41 is located along the direction in which thelayers are stacked has the end face 71E located at the side surface 1 c.At the side surface 1 c, the end faces 41E and 71E are electrically andphysically connected to each other. As a result, the end faces 41E and71E form the one contiguous terminal connecting surface 91 c. Theterminal electrode 11 touches the end faces 41E and 71E, that is, theterminal connecting surface 91 c, and is thereby connected to theconductor layers 41 and 71. The lower conductor layer 41 corresponds tothe first conductor layer of the invention. The upper conductor layer 71corresponds to the second conductor layer of the invention.

The lower conductor layer 42 that is not used to form any passiveelement has the end face 42E located at the side surface 1 d. The upperconductor layer 72 that is not used to form any passive element and thatis located at a level different from the level at which the lowerconductor layer 42 is located along the direction in which the layersare stacked has the end face 72E located at the side surface 1 d. At theside surface 1 d, the end faces 42E and 72E are electrically andphysically connected to each other. As a result, the end faces 42E and72E form the one contiguous terminal connecting surface 91 d. Theterminal electrode 12 touches the end faces 42E and 72E, that is, theterminal connecting surface 91 d, and is thereby connected to theconductor layers 42 and 72.

According to the embodiment, it is possible to increase the area of eachof the regions in which the conductor layers touch the terminalelectrodes 11 to 14, and to thereby enhance the reliability ofconnection between the conductor layers and the terminal electrodes 11to 14. According to the embodiment, the respective two of the conductorlayers used to form the terminal connecting surfaces 91 c to 91 f arenot those used to form an identical passive element. As a result, toform the terminal connecting surfaces 91 c to 91 f, it is not necessaryto make the number of conductor layers used to form a single passiveelement greater than required, and consequently, it is possible toreduce the size and profile of the thin-film device 1.

According to the embodiment, the maximum number of the conductor layersaligned along the direction in which the layers are stacked is two,which is the minimum number required to form the terminal connectingsurfaces 91 c to 91 f. As a result, it is possible to reduce the sizeand profile of the thin-film device 1 in particular.

In the embodiment the protection film 8 has the four concave portions 8c to 8 f each of which has a shape that is recessed inward from theouter edge of the protection film 8. The concave portions 8 c to 8 fexpose the respective portions of the top surface of the upper conductorlayer that touch the terminal electrodes 11 to 14, and accommodaterespective portions of the terminal electrodes 11 to 14. Therefore, theconcave portions 8 c to 8 f have a function of defining the shapes andlocations of the terminal electrodes 11 to 14. As a result, according tothe embodiment, it is possible to suppress variations in shapes andlocations of the terminal electrodes 11 to 14. It is thereby possible toprevent variations in electrical characteristics of the thin-film device1 resulting from variations in magnitude of electromagnetic coupling orcapacitive coupling between the terminal electrodes 11 to 14 and theconductor layers of the device main body 1B. Furthermore, according tothe embodiment, it is possible to prevent variations in electricalcharacteristics of the thin-film device 1 or an occurrence ofshort-circuit between adjacent ones of the terminal electrodes resultingfrom variations in distance between the respective adjacent ones of theterminal electrodes.

At each of the side surfaces 1 c to 1 f of the device main body 1B, ifthe end faces of the lower conductor layer and the upper conductor layerwere not disposed to be contiguous to each other, the end face of theinsulating layer 5 would exist between the end faces of the lowerconductor layer and the upper conductor layer. Compared with this case,in the embodiment, the number of interfaces of the layers or filmsappearing at the side surfaces 1 c to 1 f is smaller, since the endfaces of the lower conductor layer and the upper conductor layer arecontiguous to each other. As a result, according to the embodiment, itis possible to reduce occurrences of defects such as peeling or chippingof layers or films when the thin-film device substructure is cut.

Second Embodiment

A thin-film device of a second embodiment of the invention will now bedescribed. Reference is now made to FIG. 20 to describe the circuitconfiguration of the thin-film device of the second embodiment. FIG. 20is a schematic diagram illustrating the circuit configuration of thethin-film device of the second embodiment. The thin-film device 201 ofthe embodiment has a function of a high-pass filter.

As shown in FIG. 20, the thin-film device 201 of the embodimentincorporates: two input/output terminals 301 and 302 for receiving andoutputting signals; two capacitors 311 and 312; and two inductors 321and 322. The capacitor 311 has an end connected to the input/outputterminal 301. The capacitor 312 has an end connected to the other end ofthe capacitor 311, and has the other end connected to the input/outputterminal 302. The inductor 321 has an end connected to the other end ofthe capacitor 311, and has the other end grounded. The inductor 322 hasan end connected to the input/output terminal 302, and has the other endgrounded.

Reference is now made to FIG. 12 to FIG. 19 to describe the structure ofthe thin-film device 201 of the embodiment. Each of FIG. 12 and FIG. 13is a cross-sectional view of the thin-film device 201. FIG. 14 is a topview of the thin-film device 201. The cross-section of FIG. 12 is takenalong line 12-12 of FIG. 14. The cross-section of FIG. 13 is taken alongline 13-13 of FIG. 14. FIG. 15 is a top view of lower conductor layersthat the thin-film device 201 includes. FIG. 16 is a top view of aninsulating layer that the thin-film device 201 includes. FIG. 17 is atop view of a dielectric film that the thin-film device 201 includes.FIG. 18 is a top view of upper conductor layers that the thin-filmdevice 201 includes. FIG. 19 is a top view of a protection film that thethin-film device 201 includes.

As shown in FIG. 12 to FIG. 14, the thin-film device 201 incorporates adevice main body 201B and four terminal electrodes 211 to 214. Thedevice main body 201B corresponds to the layered structure of theinvention. The device main body 201B is nearly rectangular-solid-shaped,and has a top surface 201 a, a bottom surface 201 b, and four sidesurfaces 201 c to 201 f coupling the top surface 201 a and the bottomsurface 201 b to each other. The terminal electrodes 211 to 214 aredisposed to touch respective portions of the side surfaces 201 c to 201f. The terminal electrode 211 constitutes the input/output terminal 301of FIG. 20. The terminal electrode 212 constitutes the input/outputterminal 302 of FIG. 20. The terminal electrodes 213 and 214 aredesigned to be connected to the ground.

The device main body 201B incorporates: a substrate 202; and aflattening film 203, lower conductor layers 241 to 245, an insulatinglayer 205, a dielectric film 206, upper conductor layers 271 to 274, anda protection film 208 that are stacked in this order on the substrate202.

The substrate 202 is rectangular-solid-shaped. The substrate 202 has: atop surface 202 a and a bottom surface 202 b that face toward oppositedirections; and four side surfaces 202 c to 202 f that couple the topsurface 202 a and the bottom surface 202 b to each other. The substrate202 is made of a material the same as that of the substrate 2 of thefirst embodiment.

The material, thickness and surface roughness of the top surface of theflattening film 203 are the same as those of the flattening film 3 ofthe first embodiment. If the substrate 202 is made of an insulatingmaterial and the surface roughness of the top surface thereof issufficiently small, the lower conductor layers 241 to 245 may bedisposed directly on the substrate 202 without providing the flatteningfilm 203.

The material and thickness of the lower conductor layers 241 to 245, theupper conductor layers 271 to 274, and the terminal electrodes 211 to214 are the same as those of the lower conductor layers 41 to 43, theupper conductor layers 71 to 74, and the terminal electrodes 11 to 14,respectively, of the first embodiment. The material and thickness of theinsulating layer 205 and the protection film 208 are the same as thoseof the insulating layer 5 and the protection film 8, respectively, ofthe first embodiment. The material and thickness of the dielectric film206 are the same as those of the dielectric film 6 of the firstembodiment.

Reference is now made to FIG. 15 to describe the shapes of the lowerconductor layers 241 to 245. FIG. 15 is a top view illustrating thelower conductor layers 241 to 245. The lower conductor layer 241includes a lead electrode portion 241 a and a wide portion 241 bconnected to the lead electrode portion 241 a. The lower conductor layer241 has an end face 241E located at a position that coincides with theridgeline between the top surface 202 a and the side surface 202 c ofthe substrate 202 when the lower conductor layer 241 is seen from above.The end face 241E is also an end face of the lead electrode portion 241a.

The lower conductor layer 242 includes a lead electrode portion 242 aand a wide portion 242 b connected to the lead electrode portion 242 a.The lower conductor layer 242 has an end face 242E located at a positionthat coincides with the ridgeline between the top surface 202 a and theside surface 202 d of the substrate 202 when the lower conductor layer242 is seen from above. The end face 242E is also an end face of thelead electrode portion 242 a.

The lower conductor layer 243 includes a lead electrode portion 243 aand a wide portion 243 b connected to the lead electrode portion 243 a.The lower conductor layer 243 has an end face 243E located at a positionthat coincides with the ridgeline between the top surface 202 a and theside surface 202 e of the substrate 202 when the lower conductor layer243 is seen from above. The end face 243E is also an end face of thelead electrode portion 243 a.

The lower conductor layer 244 includes a lead electrode portion 244 aand an inductor-forming portion 244 b having an end connected to thelead electrode portion 244 a. The lower conductor layer 244 has an endface 244E located at a position that coincides with the ridgelinebetween the top surface 202 a and the side surface 202 f of thesubstrate 202 when the lower conductor layer 244 is seen from above. Theend face 244E is also an end face of the lead electrode portion 244 a.

The lower conductor layer 245 includes a capacitor-forming portion 245 aand an inductor-forming portion 245 b having an end connected to thecapacitor-forming 245 a.

Reference is now made to FIG. 16 to describe the shape of the insulatinglayer 205. FIG. 16 is a top view of the insulating layer 205. Theillustrating layer 205 covers major parts of the flattening film 203 andthe lower conductor layers 241 to 245. The insulating layer 205 hasopenings 251 to 254. The opening 251 is located above a portion near anend of the capacitor-forming portion 245 a of the lower conductor layer245, the end being taken along the longitudinal direction. The opening252 is located above a portion near the other end of thecapacitor-forming portion 245 a of the lower conductor layer 245, theother end being taken along the longitudinal direction. The opening 253is located above a portion near the other end of the inductor-formingportion 245 b of the lower conductor layer 245. The opening 254 islocated above a portion near the other end of the inductor-formingportion 244 b of the lower conductor layer 244.

The insulating layer 205 has four concave portions 205 c to 205 f eachof which has a shape that is recessed inward from the outer edge of theinsulating layer 205. The concave portions 205 c to 205 f arerespectively located at positions corresponding to the side surfaces 202c to 202 f of the substrate 2. The concave portions 205 c to 205 fexpose the top surfaces of the lead electrode portions 241 a, 242 a, 243a and 244 a, respectively.

Reference is now made to FIG. 17 to describe the shape of the dielectricfilm 206. FIG. 17 is a top view of the dielectric film 206. Thedielectric film 206 covers the entire top surface of the insulatinglayer 205. The dielectric film 206 is located in the openings 251 and252, too. The dielectric film 206 has openings 263 and 264. The opening263 is located above the opening 253 of the insulating layer 205. Theopening 264 is located above the opening 254 of the insulating layer205.

The dielectric film 206 has four concave portions 206 c to 206 f each ofwhich has a shape that is recessed inward from the outer edge of thedielectric film 206. The concave portions 206 c to 206 f arerespectively located above the concave portions 205 c to 205 f of theinsulating layer 205. The concave portions 206 c to 206 f expose the topsurfaces of the lead electrode portions 241 a, 242 a, 243 a and 244 a,respectively.

Reference is now made to FIG. 18 to describe the shapes of the upperconductor layers 271 to 274. FIG. 18 is a top view illustrating theupper conductor layers 271 to 274. The upper conductor layer 271includes a lead electrode portion 271 a, and a capacitor-forming portion271 b connected to the lead electrode portion 271 a. The upper conductorlayer 271 has an end face 271E located at a position that coincides withthe ridgeline between the top surface 202 a and the side surface 202 cof the substrate 202 when the upper conductor layer 271 is seen fromabove. The end face 271E is also an end face of the lead electrodeportion 271 a. A portion of the capacitor-forming portion 271 b islocated in the opening 251 and opposed to a portion of thecapacitor-forming portion 245 b of the lower conductor layer 245 withthe dielectric film 206 disposed in between. These portions of thecapacitor-forming portions 271 b and 245 b and the dielectric film 206constitute the capacitor 311 of FIG. 20.

The upper conductor layer 272 includes a lead electrode portion 272 a, acapacitor-forming portion 272 b connected to the lead electrode portion272 a, and an inductor-forming portion 272 c having an end connected tothe capacitor-forming portion 272 b. The upper conductor layer 272 hasan end face 272E located at a position that coincides with the ridgelinebetween the top surface 202 a and the side surface 202 d of thesubstrate 202 when the upper conductor layer 272 is seen from above. Theend face 272E is also an end face of the lead electrode portion 272 a. Aportion of the capacitor-forming portion 272 b is disposed in theopening 252 and opposed to another portion of the capacitor-formingportion 245 b of the lower conductor layer 245 with the dielectric film206 disposed in between. These portions of the capacitor-formingportions 272 b and 245 b and the dielectric film 206 constitute thecapacitor 312 of FIG. 20. A portion near the other end of theinductor-forming portion 272 c is located in the openings 264 and 254and connected to the portion near the other end of the inductor-formingportion 244 b of the lower conductor layer 244. The inductor-formingportions 244 b and 272 c constitute the inductor 322 of FIG. 20.

The upper conductor layer 273 includes a lead electrode portion 273 aand a wide portion 273 b connected to the lead electrode portion 273 a.The upper conductor layer 273 has an end face 273E located at a positionthat coincides with the ridgeline between the top surface 202 a and theside surface 202 e of the substrate 202 when the upper conductor layer273 is seen from above. The end face 273E is also an end face of thelead electrode portion 273 a.

The upper conductor layer 274 includes a lead electrode portion 274 aand an inductor-forming portion 274 b having an end connected to thelead electrode portion 274 a. The upper conductor layer 274 has an endface 274E located at a position that coincides with the ridgelinebetween the top surface 202 a and the side surface 202 f of thesubstrate 202 when the upper conductor layer 274 is seen from above. Theend face 274E is also an end face of the lead electrode portion 274 a. Aportion near the other end of the inductor-forming portion 274 b islocated in the openings 263 and 253 and connected to the portion nearthe other end of the inductor-forming portion 245 b of the lowerconductor layer 245. The inductor-forming portions 245 b and 274 bconstitute the inductor 321 of FIG. 20.

The lead electrode portions 271 a, 272 a, 273 a and 274 a are connectedto the lead electrode portions 241 a, 242 a, 243 a and 244 a,respectively.

Reference is now made to FIG. 19 to describe the shape of the protectionfilm 208. FIG. 19 is a top view of the protection film 208. Theprotection film 208 covers major parts of the upper conductor layers 271to 274. The protection film 208 has four concave portions 208 c to 208 feach of which has a shape that is recessed inward from the outer edge ofthe protection film 208. The concave portions 208 c to 208 f arerespectively located above the concave portions 206 c to 206 f of thedielectric film 206. The concave portions 208 c to 208 f expose the topsurfaces of the lead electrode portions 271 a, 272 a, 273 a and 274 a,respectively.

Reference is now made to FIG. 12 to FIG. 14 to describe the connectionbetween the conductor layers and the terminal electrodes 211 to 214 indetail. As shown in FIG. 13, at the side surface 201 c of the devicemain body 201B, the end face 241E of the lower conductor layer 241 andthe end face 271E of the upper conductor layer 271 are electrically andphysically connected to each other. As a result, the end faces 241E and271E form one contiguous terminal connecting surface 291 c. As shown inFIG. 13, at the side surface 201 d of the device main body 201B, the endface 242E of the lower conductor layer 242 and the end face 272E of theupper conductor layer 272 are electrically and physically connected toeach other. As a result, the end faces 242E and 272E form one contiguousterminal connecting surface 291 d. As shown in FIG. 12, at the sidesurface 201 e of the device main body 201B, the end face 243E of thelower conductor layer 243 and the end face 273E of the upper conductorlayer 273 are electrically and physically connected to each other. As aresult, the end faces 243E and 273E form one contiguous terminalconnecting surface 291 e. As shown in FIG. 12, at the side surface 201 fof the device main body 201B, the end face 244E of the lower conductorlayer 244 and the end face 274E of the upper conductor layer 274 areelectrically and physically connected to each other. As a result, theend faces 244E and 274E form one contiguous terminal connecting surface291 f.

As shown in FIG. 13, the terminal electrode 211 is disposed to touch aportion of the side surface 201 c and a portion of the bottom surface201 b contiguous to the side surface 201 c of the device main body 201B.The terminal electrode 211 is smaller in width than the side surface 201c. The terminal electrode 211 touches the end faces 241E and 271E, thatis, the terminal connecting surface 291 c, and is thereby connected tothe conductor layers 241 and 271. A portion of the terminal electrode211 is placed in the concave portion 208 c of the protection film 208and thereby touches a portion of the top surface of the upper conductorlayer 271.

As shown in FIG. 13, the terminal electrode 212 is disposed to touch aportion of the side surface 201 d and a portion of the bottom surface201 b contiguous to the side surface 201 d of the device main body 201B.The terminal electrode 212 is smaller in width than the side surface 201d. The terminal electrode 212 touches the end faces 242E and 272E, thatis, the terminal connecting surface 291 d, and is thereby connected tothe conductor layers 242 and 272. A portion of the terminal electrode212 is placed in the concave portion 208 d of the protection film 208and thereby touches a portion of the top surface of the upper conductorlayer 272.

As shown in FIG. 12, the terminal electrode 213 is disposed to touch aportion of the side surface 201 e and a portion of the bottom surface201 b contiguous to the side surface 201 e of the device main body 201B.The terminal electrode 213 is smaller in width than the side surface 201e. The terminal electrode 213 touches the end faces 243E and 273E, thatis, the terminal connecting surface 291 e, and is thereby connected tothe conductor layers 243 and 273. A portion of the terminal electrode213 is placed in the concave portion 208 e of the protection film 208and thereby touches a portion of the top surface of the upper conductorlayer 273.

As shown in FIG. 12, the terminal electrode 214 is disposed to touch aportion of the side surface 201 f and a portion of the bottom surface201 b contiguous to the side surface 201 f of the device main body 201B.The terminal electrode 214 is smaller in width than the side surface 201f. The terminal electrode 214 touches the end faces 244E and 274E, thatis, the terminal connecting surface 291 f, and is thereby connected tothe conductor layers 244 and 274. A portion of the terminal electrode214 is placed in the concave portion 208 f of the protection film 208and thereby touches a portion of the top surface of the upper conductorlayer 274.

The terminal electrodes 211 to 214 do not extend out of the concaveportions 208 c to 208 f, respectively, and do not reach over theprotection film 208. In the example shown in FIG. 12 to FIG. 14, thereis no space between respective edges of the concave portions 208 c to208 f and the respective portions of the terminal electrodes 211 to 214disposed in the concave portions 208 c to 208 f. Furthermore, in thisexample, the top surface of the protection film 208 and the top surfacesof the terminal electrodes 211 to 214 form a contiguous flat surface. Inthis case, the top surface of the thin-film device 201 is flat. Itsuffices that portions of the terminal electrodes 211 to 214 aredisposed in the concave portions 208 c to 208 f, respectively, and theremay be a space between the respective edges of the concave portions 208c to 208 f and the respective portions of the terminal electrodes 211 to214. Furthermore, there may be a difference in level between the topsurface of the protection film 208 and the top surface of each of theterminal electrodes 211 to 214.

It is not necessarily required that the terminal electrodes 211 to 214be located on the bottom surface 201 b of the device main body 201B.Furthermore, the lower end face of each of the terminal electrodes 211to 214 may be located at an arbitrary level between the lower surface ofthe lower conductor layer and the bottom surface 201 b of the devicemain body 201B.

A method of manufacturing the thin-film device 201 of the secondembodiment is similar to the method of manufacturing the thin-filmdevice 1 of the first embodiment.

Effects of the thin-film device 201 of the embodiment will now bedescribed. The thin-film device 201 of the embodiment incorporates thedevice main body 201B and the terminal electrodes 211 to 214. The devicemain body 201B includes: the lower conductor layers 241 to 245 and theupper conductor layers 271 to 274, the lower and upper conductor layersbeing located at different levels along the direction in which thelayers are stacked; and the insulating layer 205 disposed between two ofthe conductor layers that are adjacent to each other along the directionin which the layers are stacked. In addition, the device main body 201Bhas the side surfaces 201 c to 201 f. The terminal electrodes 211 to 214are disposed to touch the side surfaces 201 c to 201 f, respectively.The device main body 201B incorporates the capacitors 311 and 312 andthe inductors 321 and 322 each of which is a passive element formedusing at least one of the conductor layers.

The lower conductor layer 244 used to form the inductor 322 has the endface 244E located at the side surface 201 f. The upper conductor layer274 used to form the inductor 321 and located at a level different fromthe level at which the lower conductor layer 244 is located along thedirection in which the layers are stacked has the end face 274E locatedat the side surface 201 f. At the side surface 201 f, the end faces 244Eand 274E are electrically and physically connected to each other. As aresult, the end faces 244E and 274E form the one contiguous terminalconnecting surface 291 f. The terminal electrode 214 touches the endfaces 244E and 274E, that is, the terminal connecting surface 291 f, andis thereby connected to the conductor layers 244 and 274. The inductor322 corresponds to the first passive element of the invention. Theinductor 321 corresponds to the second passive element of the invention.The lower conductor layer 244 corresponds to the first conductor layerof the invention. The upper conductor layer 274 corresponds to thesecond conductor layer of the invention.

The upper conductor layer 271 used to form the capacitor 311 has the endface 271E located at the side surface 201 c. The lower conductor layer241 that is not used to form any passive element and that is located ata level different from the level at which the upper conductor layer 271is located along the direction in which the layers are stacked has theend face 241E located at the side surface 201 c. At the side surface 201c, the end faces 241E and 271E are electrically and physically connectedto each other. As a result, the end faces 241E and 271E form the onecontiguous terminal connecting surface 291 c. The terminal electrode 211touches the end faces 241E and 271E, that is, the terminal connectingsurface 291 c, and is thereby connected to the conductor layers 241 and271. The upper conductor layer 271 corresponds to the first conductorlayer of the invention. The lower conductor layer 241 corresponds to thesecond conductor layer of the invention.

The upper conductor layer 272 used to form the capacitor 312 and theinductor 322 has the end face 272E located at the side surface 201 d.The lower conductor layer 242 that is not used to form any passiveelement and that is located at a level different from the level at whichthe upper conductor layer 272 is located along the direction in whichthe layers are stacked has the end face 242E located at the side surface201 d. At the side surface 201 d, the end faces 242E and 272E areelectrically and physically connected to each other. As a result, theend faces 242E and 272E form the one contiguous terminal connectingsurface 291 d. The terminal electrode 212 touches the end faces 242E and272E, that is, the terminal connecting surface 291 d, and is therebyconnected to the conductor layers 242 and 272. The upper conductor layer272 corresponds to the first conductor layer of the invention. The lowerconductor layer 242 corresponds to the second conductor layer of theinvention.

The lower conductor layer 243 that is not used to form any passiveelement has the end face 243E located at the side surface 201 e. Theupper conductor layer 273 that is not used to form any passive elementand that is located at a level different from the level at which thelower conductor layer 243 is located along the direction in which thelayers are stacked has the end face 273E located at the side surface 201e. At the side surface 201 e, the end faces 243E and 273E areelectrically and physically connected to each other. As a result, theend faces 243E and 273E form the one contiguous terminal connectingsurface 291 e. The terminal electrode 213 touches the end faces 243E and273E, that is, the terminal connecting surface 291 e, and is therebyconnected to the conductor layers 243 and 273.

According to the embodiment, it is possible to increase the area of eachof the regions in which the conductor layers touch the terminalelectrodes 211 to 214, and to thereby enhance the reliability ofconnection between the conductor layers and the terminal electrodes 211to 214. According to the embodiment, the respective two of the conductorlayers used to form the terminal connecting surfaces 291 c to 291 f arenot those used to form an identical passive element. As a result, inorder to form the terminal connecting surfaces 291 c to 291 f, it is notnecessary to make the number of conductor layers used to form a singlepassive element greater than required, and consequently, it is possibleto reduce the size and profile of the thin-film device 201.

According to the embodiment, the maximum number of the conductor layersaligned along the direction in which the layers are stacked is two,which is the minimum number required to form the terminal connectingsurfaces 291 c to 291 f. As a result, it is possible to reduce the sizeand profile of the thin-film device 201, in particular. The remainder ofeffects of the second embodiment are similar to those of the firstembodiment.

The present invention is not limited to the foregoing embodiments butmay be practiced in still other ways. For example, the combination ofthe first and second passive elements of the invention may be acombination of a capacitor and an inductor.

The thin-film device of the invention may include a semiconductor layerand/or a magnetic layer in addition to the conductor layers.Furthermore, the number of terminal electrodes of the thin-film deviceof the invention is not limited to four but may be any number.

The invention is applicable not only to thin-film devices having thefunction of a low-pass filter disclosed in the first embodiment andthin-film devices having the function of a high-pass filter disclosed inthe second embodiment, but also to thin-film devices in generalincorporating conductor layers and terminal electrodes connected to theconductor layers. Functions of thin-film devices to which the inventionis applicable include those of passive elements such as a capacitor andan inductor, active elements such as a transistor, and circuitsincluding a plurality of elements. Specifically, such circuits includean LC circuit component, various sorts of filters such as a low-passfilter, a high-pass filter and a band-pass filter, a diplexer, and aduplexer.

The thin-film device of the invention is utilized for a mobilecommunications apparatus such as a cellular phone and a communicationsapparatus for a wireless local area network (LAN).

Obviously many modifications and variations of the present invention arepossible in the light of the above teachings. It is therefore to beunderstood that within the scope of the appended claims the inventionmay be practiced otherwise than as specifically described.

1. A thin-film device comprising: a layered structure including aplurality of conductor layers disposed at different levels along adirection in which the layers are stacked and an insulating layerdisposed between two of the conductor layers located adjacent to eachother along the direction in which the layers are stacked, the layeredstructure having a top surface and a bottom surface located at oppositeends in the direction in which the layers are stacked, and a sidesurface coupling the top surface and the bottom surface to each other;and a terminal electrode disposed to touch the side surface of thelayered structure, wherein: the layered structure incorporates a passiveelement formed using at least one of the conductor layers; the pluralityof conductor layers include a lower conductor layer that is not used toform the passive element, and an upper conductor layer that is used toform the passive element and that is disposed above the lower conductorlayer; each of the upper conductor layer and the lower conductor layerincludes a lead electrode portion having an end face located at the sidesurface of the layered structure; the insulating layer is disposedbetween the upper conductor layer and the lower conductor layer and hasa concave portion having a shape that is recessed inward from an outeredge of the insulating layer; the concave portion exposes a top surfaceof the lead electrode portion of the lower conductor layer; the leadelectrode portion of the upper conductor layer touches the top surfaceof the lead electrode portion of the lower conductor layer through theconcave portion, and is thereby directly connected to the lead electrodeportion of the lower conductor layer; and at the side surface of thelayered structure, the end face of the lead electrode portion of thelower conductor layer and the end face of the lead electrode portion ofthe upper conductor layer are directly connected to each otherelectrically and physically, thereby forming one contiguous terminalconnecting surface along substantially an entire length of the end faceof the lead electrode portion of the lower conductor layer and the endface of the lead electrode portion of the upper conductor layer, and theterminal electrode touches the one contiguous terminal connectingsurface and is thereby connected to the upper conductor layer and thelower conductor layer.
 2. The thin-film device according to claim 1,wherein the maximum number of the conductor layers aligned along thedirection in which the layers are stacked is two.